A Dual Side Electroluminescence Measurement System for LED Wafer Manufacturing

Author(s): H.- T. Kim, J. Kim, S. Kim, H.- K. Yuh, D.- H. Kim, D.- H. Ahn, D.- S. Shin.

Journal Name: Recent Patents on Signal Processing (Discontinued)

Volume 3 , Issue 1 , 2013


A measurement system is presented for evaluating the characteristics of both sides of an LED wafer using electroluminescence (EL). Integrating spheres (IS), photodiodes, pico-ammeters, spectrometers were installed in the front and rear sides to measure optical characteristics with minimum EL loss. A probe was connected to a source meter with a thin wire and attached using a transparent fixture in the front IS. The EL characteristics in a measuring point were peak wavelength, FWHM (full width at half maximum), forward current, forward voltage and reverse current. EL images were created by combining the motion of a stage and the EL characteristics. The correlation between the EL and the chip-level tests and the repeatability test showed that the dual measurement is useful for LED manufacturing. Our patents were applied to install the probe and create the EL image.

Keywords: Electroluminescence, EL imaging, epi-wafer, Optical spectrum, LED manufacturing.

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Article Details

Year: 2013
Page: [49 - 55]
Pages: 7
DOI: 10.2174/2210686311303010007

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PDF: 15