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Nitridation of Bulk Monocrystalline and Powdered Microcrystalline Gallium Arsenide Towards Cubic Gallium Nitride Nanopowders

Author(s): Mariusz Drygas, Miroslaw M. Bucko, Jerzy F. Janik.

Abstract:

Polished (111) surfaces of monocrystalline cubic gallium arsenide GaAs platelets and a powdered microcrystalline form of GaAs were nitrided towards gallium nitride GaN under a flow of ammonia at temperatures in the range 600-900 ºC for one to several tens of hours. The progress of nitridation was followed mainly by grazing incidence X-ray diffraction GIXD and powder X-ray diffraction XRD. Morphology changes were examined with scanning electron microscopy supplemented with energy dispersive analysis SEM/EDX. Thermogravimetric and differential thermal analyses TGA/DTA were used to evaluate a thermal stability of the GaAs substrate. The substrate/temperature/time related interplay in the formation of the cubic and hexagonal GaN polytypes from cubic GaAs and conditions favoring the metastable cubic GaN polytype are delineated.

Keywords: Chemical synthesis, nitrides, crystal symmetry, nanostructures.

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Article Details

VOLUME: 9
ISSUE: 2
Year: 2013
Page: [173 - 182]
Pages: 10
DOI: 10.2174/1573413711309020002
Price: $58