Nitridation of Bulk Monocrystalline and Powdered Microcrystalline Gallium Arsenide Towards Cubic Gallium Nitride Nanopowders
Miroslaw M. Bucko,
Jerzy F. Janik.
Polished (111) surfaces of monocrystalline cubic gallium arsenide GaAs platelets and a powdered microcrystalline form of
GaAs were nitrided towards gallium nitride GaN under a flow of ammonia at temperatures in the range 600-900 ºC for one to several tens
of hours. The progress of nitridation was followed mainly by grazing incidence X-ray diffraction GIXD and powder X-ray diffraction
XRD. Morphology changes were examined with scanning electron microscopy supplemented with energy dispersive analysis SEM/EDX.
Thermogravimetric and differential thermal analyses TGA/DTA were used to evaluate a thermal stability of the GaAs substrate. The
substrate/temperature/time related interplay in the formation of the cubic and hexagonal GaN polytypes from cubic GaAs and conditions
favoring the metastable cubic GaN polytype are delineated.
Keywords: Chemical synthesis, nitrides, crystal symmetry, nanostructures.
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