Investigation of Crystal Size Impacts on the Tunneling Current in Germanium Nanocrystal Metal-Oxide-Semiconductor Transistors
L. F. Mao,
C. Y. Zhu,
L. J. Zhang,
A. M. Ji,
X. Y. Liu.
The crystal size of nano-crystalline germanium dependence depends on the gate current in memory devices has been theoretically
investigated when the mean diameter is uniquely controlled by the nominal thickness of the deposition of Ge layer. Because the
band gap and dielectric constant of nano-crystalline germanium will be largely affected by crystal size in the regime of nano-scale, the
calculated gate currents in nano-crystalline germanium strongly depends on the crystal size, especially on a few nanometers, when the
equivalent oxide thickness memoirs the same. The numerical calculations demonstrate that dielectric constant of nano-crystalline germanium
impacts on the Fowler-Nordheim tunneling current can be neglected when the oxide field is higher than 3 MV/cm. The results also
demonstrate that the leakage current can be reduced by fabricating thinner nc-Ge layer in memory devices.
Keywords: Tunneling, nano-crystalline germanium, gate current, leakage current
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