Processing and Electrical Characterization of Metal-Oxide-Semiconductor Structures Prepared by DBSA-Doped TiO2 Nanoparticles
In the present study, using sol-gel method titanium dioxide (TiO2) nanoparticles with a new doping material have been synthesized,
and a Dodecyl Benzene Sulfonic Acid (DBSA)-doped TiO2/p-Si Metal-Oxide-Semiconductor (MOS) structure has been fabricated.
The characterizations of the structural and morphological properties of the DBSA-doped TiO2 nanoparticles have been carried out by
means of X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), respectively. The XRD results show that DBSA-doped TiO2
have a crystalline rutile phase along the (110) growth direction. It was confirmed from AFM images that the nanostructure of DBSAdoped
TiO2 is grown as rock-like. The electrical characteristics of the device have also been performed, including current–voltage (I–V)
and capacitance–voltage (C–V) at room temperature.
Keywords: TiO2 nanoparticles, Metal-Oxide-Semiconductor structures, Interface states density, Sol-Gel method
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