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Processing and Electrical Characterization of Metal-Oxide-Semiconductor Structures Prepared by DBSA-Doped TiO2 Nanoparticles

Author(s): Savas Sonmezoglu.

Abstract:

In the present study, using sol-gel method titanium dioxide (TiO2) nanoparticles with a new doping material have been synthesized, and a Dodecyl Benzene Sulfonic Acid (DBSA)-doped TiO2/p-Si Metal-Oxide-Semiconductor (MOS) structure has been fabricated. The characterizations of the structural and morphological properties of the DBSA-doped TiO2 nanoparticles have been carried out by means of X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), respectively. The XRD results show that DBSA-doped TiO2 have a crystalline rutile phase along the (110) growth direction. It was confirmed from AFM images that the nanostructure of DBSAdoped TiO2 is grown as rock-like. The electrical characteristics of the device have also been performed, including current–voltage (I–V) and capacitance–voltage (C–V) at room temperature.

Keywords: TiO2 nanoparticles, Metal-Oxide-Semiconductor structures, Interface states density, Sol-Gel method

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Article Details

VOLUME: 9
ISSUE: 1
Year: 2013
Page: [39 - 45]
Pages: 7
DOI: 10.2174/1573413711309010009